Semiconductor wafer test system

ABSTRACT

A semiconductor wafer test system for carrying out a burn-in test on a semiconductor wafer including multiple semiconductor devices thereon. A metal interconnect is connected to the gate electrode of each of those devices. A power supply applies an ac voltage of predetermined amplitude to a conductive plate, which creates an ac electric field to be placed on the devices. The ac field should have an intensity at least equal to a minimum value required for the burn-in test and less than a critical value, below which no break-down occurs in the gate oxide film of each device. By changing the amount of time for which the devices are exposed to the ac field, the burn-in period can be changed freely. In addition, forward and reverse fields are both placed on the gate oxide film of each device. Thus, failures can be screened out very effectively.

BACKGROUND OF THE INVENTION

The present invention relates to a system and method for carrying out anon-contact burn-in test on a semiconductor wafer.

Recently, the annual production of semiconductor devices has beenrocketing year after year. Generally speaking, the greater the number ofdevices produced per unit time, the greater the number of devices withinfant mortality to be screened out therefrom by an accelerated lifetest called “burn-in”, for example. As is well known in the art, aburn-in test is carried out on semiconductor devices by subjecting thedevices to an elevated temperature under an electrical power stress.Some of the devices that failed to withstand the stress are screened outas NO-GOs, while the other devices that could endure the stresssuccessfully are shipped as GOs, or good products. Over the past fewyears, however, the time afforded to develop new semiconductor deviceshas been more and more limited. So the burn-in test should also befinished in a shorter amount of time. In addition, a wafer test systemfor use in such a burn-in test also has to have its size furtherreduced, since the devices under test have been downsized almost dayafter day.

The burn-in test has normally been carried out by applying a stressvoltage onto semiconductor devices on a wafer with probe pins broughtinto contact with the devices under test.

FIG. 14 illustrates how the burn-in test is carried out on asemiconductor wafer 301 including a great number of semi-conductordevices thereon using a known wafer test system. As shown in FIG. 14,the wafer 301, supported on a substrate plate 302, is brought intocontact with probe pins extending from a probe card 303, and thensupplied with a signal delivered from a tester 304 through the pins ofthe card 303.

Next, it will be described how the wafer test system operates. In theexample illustrated in FIG. 14, the plate 302 is grounded at a potentiallevel of 0 V. The wafer 301 is in electrical contact with the plate 302,and each of the numerous devices on the wafer 301 also has its substratepotential fixed at 0 V. In such a state, the tester 304 outputs a signalto devices under test on the wafer 301 by way of the pins of the card303. The devices under test, which are in contact with the pins of thecard 303, start to operate in response to the signal supplied from thetester 304. As a result, a voltage is applied onto the gate electrode ofeach of those devices (i.e., transistors). That is to say, a voltagestress is generated between the gate electrode of the transistor and thesubstrate thereof. In this manner, the devices on the wafer 301 aresubjected to the burn-in.

However, if test terminals provided for semiconductor devices on a waferare of a different type from those provided for devices on anotherwafer, then the known wafer test system should prepare two mutuallydifferent types of probe cards for these two wafers.

SUMMARY OF THE INVENTION

To avoid such an undesirable situation, the present inventor performed anon-contact burn-in test on semiconductor devices on a semiconductorwafer without using any probe pins. In this burn-in test, each of thedevices under test on the wafer was exposed to a direct-current (DC)electric field so that a voltage was applied onto the gate oxide film ofthe devices. Hereinafter, with reference to FIG. 10, I will brieflydescribe the burn-in test I conducted before describing the summary ofmy invention. FIG. 10 illustrates a semiconductor wafer test system thatI used for the burn-in test. First, the respective elements of thesystem will be described.

As shown in FIG. 10, a semiconductor wafer 501, including a great numberof semiconductor devices under the burn-in test, is supported on asubstrate plate 502. The burn-in test is carried out by applying apredetermined voltage from a DC power supply 504 to a conductive plate500 and by exposing the devices under test on the wafer 501 to anelectric field S500 that has been created from the conductive plate 500.The electric field S500 created from the conductive plate 500 has anintensity proportional to the voltage applied from the power supply 504.As a result, a current 1501 flows from the plate 502 into the ground.

FIG. 11 illustrates one of the devices under the burn-in test on thewafer 501 to a larger scale. First, the respective elements of thedevice will be described. As shown in FIG. 11, the semiconductor device(i.e., an MOS transistor in this case) to be exposed to the electricfield S500 created from the conductive plate 500 has been electricallyisolated from adjacent devices by isolation regions 501 e and 501 f. Thedevice includes gate electrode 501 a, gate oxide film 501 b,source/drain regions 501 c and 501 d and p-well 501 g. That is to say,part of the wafer 501 for this device includes the source/drain regions501 c and 501 d, p-well 501 g and substrate portion 501 h.

As also shown in FIG. 11, the wafer 501 is supported on the substrateplate 502. The device is exposed to the electric field S500 that hasbeen created from the conductive plate 500 by applying a voltage fromthe DC power supply 504 to the conductive plate 500. A parallel platecapacitor is formed between the conductive plate 500 and gate electrode501 a and another parallel plate capacitor is formed between the gateelectrode 501 a and p-well 501 g. A leakage resistor 512 exists betweenthe gate electrode 501 a and the ground and a current 1501 flows fromthe substrate plate 502 into the ground. In FIG. 11, only one n-channelMOS transistor is illustrated as one of the great many devices on thewafer 501 for the sake of simplicity. Accordingly, the source/drainregions 501 c and 501 d have been doped with an n-type dopant, while thep-well 501 g and substrate portion 501 h are of p-type.

The substrate portion 501 h is in electrical contact with the groundedsubstrate plate 502 and is fixed at 0 V. The p-well 501 g is in contactwith the substrate portion 501 h and these regions 501 g and 501 h areboth of p-type. So the p-well 501 g is also fixed at 0 V.

When a voltage V0 (V) is applied to the conductive plate 500, theelectric field S500 is created, thereby polarizing the gate electrode501 a and producing a voltage Va0 (V) at the gate electrode 501 a. As aresult, an electric field stress Ea (V/m) corresponding to the voltageVa0 (V) is placed on the gate oxide film 501 b. Hereinafter, this stresswill be analyzed quantitatively.

Suppose the area of the gate electrode 501 a is Sa (m²), the distancebetween the conductive plate 500 and gate electrode 501 a is d1 (m), thethickness of the gate oxide film 501 b is d2 (m), the permeabilitybetween the conductive plate 500 and gate electrode 501 a is ε1(C/(V·m)) and the permeability of the gate oxide film 501 b is ε2(C/(V·m)) To simplify the computation, one parallel plate capacitor 510is supposed to be formed between the conductive plate 500 and gateelectrode 501 a and another parallel plate capacitor 511 is supposed tobe formed between the gate electrode 501 a and p-well 501 g asschematically illustrated in FIG. 12.

As also shown in FIG. 12, a voltage is applied from the DC power supply504 to the conductive plate 500, thereby creating the electric field towhich the device under test is exposed. A leakage resistor 512 existsbetween the gate electrode 501 a and the ground.

Suppose no current flows through the resistor 512 for a while after thevoltage V0 (V) has been applied to the conductive plate 500. Then, aquantity Q0 (C) of charge stored on the parallel plate capacitor 510 isgiven by the following Equation (1):Q 0=ε1·S/d1×(V 0−Va 0)  (1)where Va0 (V) is the voltage induced at the gate electrode 501 a.

The charge quantity Q0 can also be obtained by the following Equation(2) using the quantity of charge stored on the parallel plate capacitor511:Q 0=ε2·S/d2×Va 0  (2)

Combining these Equations (1) and (2) together, the voltage Va0 (V)induced at the gate electrode 501 a is given by the following Equation(3):Va 0=ε1·d2/(ε2·d1+ε1·d2)×V 0  (3)

Accordingly, the electric field stress Ea0 (V/m) given by the followingEquation (4):Ea 0=Va 0/d2=ε1/(ε2·d1+ε1·d2)×V 0  (4)is placed on the gate oxide film 501 b. Also, the intensity E0 (V/m) ofthe electric field S500 is given by the following Equation (5):E 0=ε2/ε1×Ea 0  (5)

It should be noted that the gate electrode 501 a is grounded weakly dueto the existence of metal interconnects and leakage current components.Accordingly, the induced charges gradually disappear with time. So if aDC voltage is applied to the conductive plate 500, then the electricfield stress with the intensity Ea0 can be placed on the gate oxide film501 b for just a short period of time. To avoid this unwanted situation,if the electric field to be placed on the gate oxide film 501 b to carryout the burn-in test is represented by E1 (V/m), then an electric fieldintenser than E1 (V/m) should be placed on the gate oxide film 501 binitially.

Hereinafter, it will be described how this semiconductor wafer testsystem operates. First, the voltage V0 (V) to be applied to theconductive plate 500 will be considered.

In general, dielectric breakdown should occur even in a gate oxide film501 b with no defects if the gate oxide film 501 b were exposed to anexcessively high electric field. Accordingly, the voltage Va0 induced atthe gate electrode 501 a should be set to:Va 0=d2·E 10  (6)where E10 (V/m) is a critical electric field with an intensity at andunder which no dielectric breakdown occurs.

Combining the Equations (3) and (6) together, the critical electricfield E10 (V/m) will be placed on the gate oxide film 501 b initially ifthe voltage V0 given byV 0(ε2·d1+ε1·d2)/ε1·d2×d2·E 10  (7)is applied to the conductive plate 500.

Next, it will be described how much the electric field decreases itsintensity due to the existence of the leakage resistor 512.

The capacitance c511 (F) of the parallel plate capacitor 511 is given byc 511=ε2·S/d2  (8)

Supposing the resistance of the leakage resistor 512 is r512 (Ω), theelectric field Ea(t) (V/m), which will be placed on the gate oxide film501 b when a period of time t (s) has passed, is given byEa(t)=E 10 exp(−t/(c 511·r 512))  (9)

FIG. 13 illustrates this decrease in electric field intensity with time.The period of time t5 (s), during which an electric field equal to orintenser than E1 (V/m) is placed on the gate oxide film 501 b, is givenbyt 5=c 511·r 512×ln(E 10/E 1)  (10)

Accordingly, during this period of time t5 (s), an electric field stresswith an intensity equal to or greater than the predetermined fieldintensity E1 (V/m) is continuously placed on the gate oxide film 501 b.That is to say, the gate oxide film 501 b is subjected to a burn-in testfor this period of time t5.

In this method, however, the time t5 (s) is determined by only fourprocess constants of c511, r512, E10 and E1. Accordingly, unless theprocess conditions are changed, the burn-in period cannot be extended.

In addition, no reverse electric field is applicable to the gate oxidefilm, so devices with early failures can be screened out far lesscompletely. Furthermore, the current flows through the substrate alwaysunidirectionally except the initial state. Accordingly, not so muchstress can be placed on lattice defects that exist either in thesubstrate or around the interface between the gate electrode and thesubstrate. Thus, those failures can be screened out only insufficiently.

It is therefore an object of this invention to get the burn-in periodchanged by various parameters other than those process constants for asemiconductor wafer test system for use in a burn-in test onsemiconductor devices.

Another object of this invention is to make a reverse electric fieldapplicable to the devices under test.

Still another object of this invention is to place a sufficiently highvoltage stress on lattice defects existing in the substrate or aroundthe substrate/gate electrode interface.

To achieve these objects, according to the present invention, asemiconductor wafer under a burn-in test is exposed to eitherelectromagnetic wave or alternating-current electric field.

Specifically, an inventive semiconductor wafer test system is a systemfor carrying out a burn-in test on a great number of semiconductordevices that have been formed on a semiconductor wafer. Each said deviceincludes a gate oxide film between a substrate and a gate electrode. Thegate electrode is connected to a metal interconnect. The system includeselectromagnetic wave generating means. The generating means exposes thewafer to an electromagnetic wave as an alternating current wave andplaces an electric field with a predetermined intensity on the gateoxide film of each said device on the wafer, thereby carrying out theburn-in test on the devices.

Another inventive semiconductor wafer test system is a system forcarrying out a burn-in test on a great number of semiconductor deviceson a semiconductor wafer by exposing the wafer to an alternating-currentelectric field, not the electromagnetic wave.

In one embodiment of the present invention, the inventive system mayinclude stress sensing means and control means. The stress sensing meanssenses a voltage stress imposed on the gate oxide film of each saiddevice while the wafer is being exposed to the electromagnetic wave orthe alternating-current electric field. The control means controls theintensity of the electromagnetic wave or the alternating-currentelectric field so that the voltage stress sensed by the stress sensingmeans falls within a preset threshold value range.

In this particular embodiment, the voltage stress, which has been sensedby the stress sensing means as being imposed on the gate oxide film,preferably includes forward and reverse voltage stresses. The controlmeans preferably controls the intensity of the electromagnetic wave orthe alternating-current electric field so that the forward and reversevoltage stresses imposed on the gate oxide film fall within first andsecond preset threshold value ranges, respectively. In this case, thesecond range is preferably lower than the first range.

Still another inventive semiconductor wafer test system is a system forcarrying out a burn-in test on a great number of semiconductor devicesformed on a semiconductor wafer. Each said device includes a gate oxidefilm between a substrate and a gate electrode. The gate electrode isconnected to a metal interconnect. The system includes electric fieldgenerating means and driving means. The generating means includes aconductive plate for exposing the wafer to an electric field as a directcurrent wave. The generating means sets the electric field placed on thegate oxide film of each said device on the wafer to a predeterminedintensity. The driving means loads and unloads the wafer into/from aspace where the electric field, generated from the conductive plate,exists. In this manner, the wafer is exposed to an alternating-currentelectric field to carry out the burn-in test on the devices.

According to the present invention, a semiconductor wafer can be exposedto electromagnetic wave or alternating-current electric field for aninterval of a variable length. Thus, a burn-in test can be carried outon semiconductor devices on the wafer for any arbitrary period of time.In addition, a reverse electric field is also applicable to the gateoxide film of each of those devices. Accordingly, devices with failurescan be screened out with much more certainty. Also, a sufficient stresscan be placed on lattice defects existing in the substrate or around thesubstrate/gate electrode interface.

Moreover, according to the present invention, a reverse voltage appliedto the gate oxide film of any semiconductor device is set no greaterthan the maximum allowable reverse voltage of the gate oxide film. Thus,the semiconductor devices can be tested without deteriorating the gateoxide film of any normal one of the devices.

Furthermore, according to the present invention, the driving meansalternately loads and unloads the wafer into/from a space where theelectric field generated from the conductive plate exists. Accordingly,it is possible to expose the semiconductor devices on the wafer to analternating-current electric field and freely set the burn-in period toany arbitrary length while using a direct current power supply.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary overall arrangement for a semiconductorwafer test system according to a first embodiment of the presentinvention.

FIGS. 2A, 2B, 2C, 2D and 2E are timing diagrams illustrating thewaveforms of reference current signal, current flowing, output signal ofa tester, output signal of a power supply controller and electromagneticwave, respectively, in the test system of the first embodiment.

FIGS. 3A, 3B, 3C, 3D and 3E are timing diagrams illustrating thewaveforms of reference current signal, current flowing, output signal ofa tester, output signal of a power supply controller and electromagneticwave, respectively, in a semiconductor wafer test system according to asecond embodiment of the present invention.

FIG. 4 illustrates an exemplary overall arrangement for a semiconductorwafer test system according to a third embodiment of the presentinvention.

FIG. 5 is a cross-sectional view illustrating the main portion of asemiconductor device under test.

FIG. 6 is a schematic representation illustrating how the test system ofthe third embodiment places an electric field stress on a semiconductorwafer under test.

FIGS. 7A, 7B, 7C, 7D and 7E are timing diagrams illustrating thewaveforms of reference current signal, current flowing, output signal ofa tester, output signal of a power supply controller and electric fieldgenerated from a conductive plate, respectively, in the test system ofthe third embodiment.

FIGS. 8A, 8B, 8C, 8D and 8E are timing diagrams illustrating thewaveforms of reference current signal, current flowing, output signal ofa tester, output signal of a power supply controller and electric fieldgenerated from a conductive plate, respectively, in a semiconductorwafer test system according to a fourth embodiment of the presentinvention.

FIG. 9 illustrates an exemplary overall arrangement for a semiconductorwafer test system according to a fifth embodiment of the presentinvention.

FIG. 10 illustrates an overall arrangement for a semiconductor wafertest system that I modeled.

FIG. 11 is a cross-sectional view illustrating the main portion of asemiconductor device under test.

FIG. 12 is a schematic representation illustrating how the test systemshown in FIG. 10 places an electric field stress on a semiconductorwafer under test.

FIG. 13 is a graph illustrating how the electric field stress placed bythe test system shown in FIG. 10 on the wafer under test changes withtime.

FIG. 14 illustrates an overall arrangement for a known semiconductorwafer test system.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, preferred embodiments of the present invention will bedescribed with reference to the accompanying drawings.

Embodiment 1

FIG. 1 illustrates an exemplary overall arrangement for a semiconductorwafer test system according to a first embodiment of the presentinvention. First, the respective elements of the system will bedescribed.

As shown in FIG. 1, the test system is for use to carry out a burn-intest on a great number of semiconductor devices that have been formed ona semiconductor wafer 11 supported on a substrate plate 12. The testsystem includes: electromagnetic wave generator 10 for generating anelectromagnetic wave S10 to which the wafer 11 should be exposed; andcontrol unit 13 for controlling the generator 10.

Although not shown in FIG. 1, each of those semiconductor devices on thewafer 11 may be a transistor including substrate, gate electrode andgate oxide film located between the substrate and gate electrode. Ametal interconnect is connected to the gate electrode of eachtransistor. That is to say, the devices on the wafer 11 have alreadygone through their fabrication process and will be final products whenthe wafer 11 is diced into respective chips. To carry out a burn-in teston the devices on the wafer 11 efficiently, the metal interconnect,connected to the gate electrode of each of those transistors, preferablydoes not cover the gate oxide film thereof. As for the devices on thewafer 11, the same statements will be applicable to the otherembodiments of the present invention.

As shown in FIG. 1, the control unit 13 includes power supply 14, powersupply controller 15 and tester 16. The power supply 14 supplies powerto the electromagnetic wave generator 10 to get the electromagnetic waveS10 generated by the generator 10. The power supply controller 15controls the power supply 14 by outputting a control signal S15 theretoand is controlled itself in response to a reference current signal S15 asupplied thereto. The tester 16 measures a current I11 flowing betweenthe substrate plate 12 and the ground and outputs a signal S16 to thepower supply controller 15.

In response to the output signal S15 of the power supply controller 15,the power supply 14 supplies a current in the amount proportional to thelevel of the signal S15 to the electromagnetic wave generator 10. Theelectromagnetic wave generator 10 generates an electromagnetic wave withan intensity proportional to the amount of current supplied from thepower supply 14. If the current value represented by the output signalS16 of the tester 16 is smaller than the preset value represented by thereference current signal S15 a, then the power supply controller 15increases the level of its output signal S15. On the other hand, if theformer current value is greater than the latter current value, then thepower supply controller 15 decreases the level of its output signal S15.If these current values are equal to each other, the power supplycontroller 15 retains the level of its output signal S15. And in theinitial state, the power supply controller 15 outputs zero as its outputsignal S15. The tester 16 measures the alternating current I11 flowingbetween the substrate plate 12 and the ground, and outputs the amplitudeof the current as its output signal S16 to the power supply controller15.

The tester 16 of the control unit 13 is an exemplary stress sensingmeans 18 as defined in the appended claims. That is to say, the tester16 senses an electric field stress, which is imposed on the gate oxidefilm of each device on the wafer 11 as a result of the exposure to theelectromagnetic wave generated from the electromagnetic wave generator10, by the current I11 flowing between the substrate plate 12 and theground. Also, the power supply controller 15 is an exemplary controlmeans 19. Specifically, the power supply controller 15 controls theelectric field intensity of the electromagnetic wave, generated by theelectromagnetic wave generator 10, so that the current I11, sensed bythe stress sensing means 18, falls within a preset threshold value rangedefined by the reference current signal S15 a.

Next, it will be described how the semiconductor wafer test system withsuch a configuration operates. FIGS. 2A, 2B, 2C, 2D and 2E illustratethe waveforms of the reference current signal S15 a supplied to thepower supply controller 15, current I11 flowing between the substrateplate 12 and the ground, output signal S16 of the tester 16, outputsignal S15 of the power supply controller 15 and electromagnetic waveS10 generated from the electromagnetic wave generator 10, respectively.

In carrying out a burn-in test on the devices on the wafer 11, thesubstrate plate 12 is grounded at a potential level of 0 V. The wafer 11is in electrical contact with the substrate plate 12, and each of thenumerous devices on the wafer 11 also has its substrate potential fixedat 0 V. In its initial state, the gate electrode of each of thosedevices is also fixed at 0 V due to the existence of a metalinterconnect, connected to the gate electrode, and leakage currentcomponents. While the burn-in test is carried out, an alternatingcurrent flows between the substrate plate 12 and the ground. Thisalternating current has a value proportional to the total area of gateelectrodes that are exposed to the electromagnetic wave among the gateelectrodes of the semiconductor devices. Hereinafter, this relationshipwill be analyzed quantitatively.

Suppose the electromagnetic wave generated from the electromagnetic wavegenerator 10 has a frequency of f (Hz) and an electric field intensityof E0 (V/m), the area exposed to the electromagnetic wave is S (m²), thegate oxide film of semiconductor devices has an average thickness of d(m) and an average gate density is D. Then, the electric field intensityE (V/m) of the electromagnetic wave generated from the electromagneticwave generator 10 at a time t (s) is given by the following complexnotation:E=E 0 exp(j2πft)  (11)where j is an imaginary unit. When the devices on the wafer 11 areexposed to the electromagnetic wave emitted from the electromagneticwave generator 10, the total area of gate electrodes included in theexposure range is obtained by D×S (m²). Accordingly, the current I11,flowing from the substrate plate 12 into the ground when the electricfield E is placed on the gate electrodes, is given by $\begin{matrix}\begin{matrix}{{I11} = {{ɛ \cdot D \cdot {S/d}} \times {d \cdot {E0}}\quad j\quad 2\pi\quad f\quad{\exp\left( {{j2\pi}\quad{ft}} \right)}}} \\{= {2\pi\quad{f \cdot ɛ \cdot D \cdot S \cdot {{{E0}\exp}\left( {j\left( {{2{\pi{ft}}} + {\pi/2}} \right)} \right)}}}}\end{matrix} & (12)\end{matrix}$where ε is the permeability. Equation (12) shows that the current I11flowing is proportional to not only the total gate area of the devicesexisting in the part of the wafer 11 that is exposed to theelectromagnetic wave but also the electric field intensity E0 (V/m) ofthe electromagnetic wave. In the burn-in test, the gate oxide film isexposed to an electric field with a predetermined intensity.Accordingly, supposing the reference electric field intensity is E1(V/m), when the amplitude of the alternating current I11 given byEquation (12) reaches that of the current I1 (A) given byI 1=2πf·ε·D·S·E 1(A)  (13)the burn-in test is completed.

First, the reference current signal S15 a to be supplied to the powersupply controller 15 is set to the current I1 (A). In the initial state,this current I11 is 0 (A), so the output signal S16 of the tester 16 isalso 0 (A). Then, the power supply controller 15 compares the referencecurrent signal S15 a to the output signal S16 of the tester 16, therebyincreasing its output voltage S15 from the initial value of 0 V. Thisstate corresponds to the time 0 (s) shown in FIG. 2D. As the outputvoltage S15 of the power supply controller 15 rises, the currentsupplied from the power supply 14 to the electromagnetic wave generator10 increases, so does the electric field intensity of theelectromagnetic wave generated from the electromagnetic wave generator10. As a result, the alternating current I11 flowing continuouslyincreases its amplitude in the interval between 0 (s) and the time t1(s) at which the output signal S16 of the tester 16 reaches the currentI1 (A) as shown in FIGS. 2B and 2C.

At the time t1 (s), the output signal S16 of the tester 16 gets equal tothe current I1 (A). Accordingly, the power supply controller 15 has itsoutput signal S15 fixed at the current value. As a result, from the timet1 (s) on, a constant amount of current will be supplied from the powersupply 14 and the devices on the wafer 11 will be exposed to anelectromagnetic wave with a constant electric field intensity.

Next, at a time t2 (s), the reference current signal S15 a supplied tothe power supply controller 15 is set to 0 (A). Comparing the outputsignal S16 of the tester 16 to the reference current signal S15 a, thepower supply controller 15 gradually decreases its output voltage S15.As the output voltage S15 of the power supply controller 15 falls, thecurrent supplied from the power supply 14 to the electromagnetic wavegenerator 10 decreases, so does the electric field intensity of theelectromagnetic wave generated from the electromagnetic wave generator10. As a result, the alternating current I11 flowing continuouslydecreases its amplitude in the interval between the time t2 (s) and atime t3 (s) at which the output signal S16 of the tester 16 reaches 0(A) as shown in FIGS. 2B and 2C. At the time t3 (s), the output signalS16 of the tester 16 reaches 0 (A), which is equal to the value of thereference current signal S15 a. Accordingly, the tester 16 has itsoutput signal S16 fixed at 0 (A).

That is to say, in the example illustrated in FIGS. 2A through 2E, apredetermined stress is placed on the devices (i.e., the burn-in test iscarried out) only in the interval between the times t1 (s) and t2 (s).

In this manner, a non-contact burn-in test can be carried out accordingto this embodiment on the devices on the wafer 11. Accordingly, there isno need to use or align a great number of probes or to adjust thecontact pressure thereof, thus downsizing the semiconductor wafer testsystem and shortening the test period. In addition, just by changing thelength of the interval between the times t1 and t2, the burn-in periodcan be set freely. Furthermore, since a reverse electric field is alsoplaced on the devices, failures can be screened out much moreeffectively. Also, the current flows bidirectionally through thesubstrate of each of those devices. Thus, sufficient stress can beplaced on lattice defects existing either in the substrate or around thesubstrate/gate electrode interface. Consequently, devices with failurescan be screened out even more effectively.

It should be noted that not just a forward electric field E1 (V/m) butalso a reverse electric field −E1 (V/m) are placed on the gate oxidefilm of each of those devices. When exposed to a reverse electric field,the gate oxide film might degrade its characteristics due to movement ofcarriers. For that reason, care should be taken so as not to place areverse electric field with an intensity exceeding a maximum allowablevalue.

Embodiment 2

Next, a second embodiment of the present invention will be described. Asemiconductor wafer test system according to the second embodiment mayhave the same overall configuration as the counterpart of the firstembodiment, and the illustration thereof is omitted. In this secondembodiment, the electromagnetic wave generated from the electromagneticwave generator 10 is applied as electromagnetic pulses to limit theintensity of the reverse electric field placed on the gate oxide film ofeach semiconductor device to an allowable range.

FIGS. 3A through 3E illustrate a situation where the electromagneticwave generated from the electromagnetic wave generator 10 is applied aselectromagnetic pulses. In this embodiment, the intensity of the forwardelectric field placed on the gate oxide film of each device is set tothe reference value E1 (V/m) and the maximum allowable intensity of thereverse electric field placed on the gate oxide film is set to E2 (V/m).In this manner, the duty cycle Duty of the electromagnetic pulses is settoDuty=E 2/(E 1+E 2)  (14)In the other respects, the system of the second embodiment operates inthe same way as the counterpart of the first embodiment. It should benoted that the positive intensity of the electromagnetic pulses,associated with the forward electric field, is E1 (V/m), while thenegative intensity of the electromagnetic pulses, associated with thereverse electric field, is −E2 (V/m) as shown in FIG. 3E. Thus,according to this embodiment, no reverse electric field with anintensity exceeding its maximum allowable value is placed on the gateoxide film of each semiconductor device.

Embodiment 3

FIG. 4 illustrates an exemplary overall arrangement for a semiconductorwafer test system according to a third embodiment of the presentinvention. First, the respective elements of the system will bedescribed.

As shown in FIG. 4, this test system is for use to carry out a burn-intest on a great number of semiconductor devices that have been formed ona semiconductor wafer 101 supported on a substrate plate 102. The testsystem includes: conductive plate 100 for generating an electric fieldS100 to which the wafer 101 should be exposed; and control unit 103 forcontrolling an alternating-current (ac) voltage to be applied to theconductive plate 100. The control unit 103 includes power supply 104,power supply controller 105 and tester 106. The power supply 104 appliesan ac voltage to the conductive plate 100. The power supply controller105 controls the power supply 104 by outputting a control signal S105thereto and is controlled itself in response to a reference currentsignal S105 a supplied thereto. The tester 106 measures a current I101flowing between the substrate plate 102 and the ground and outputs asignal S106 to the power supply controller 105.

In response to the output signal S105 of the power supply controller105, the power supply 104 supplies an ac voltage, whose amplitude isproportional to the level of the output signal S105, to the conductiveplate 100. The conductive plate 100 generates an electric field S100with an intensity proportional to the voltage applied from the powersupply 104. If the current value represented by the output signal S106of the tester 106 is smaller than the preset one represented by thereference current signal S105 a, then the power supply controller 105increases the level of its output signal S105. On the other hand, if theformer current value is greater than the latter current value, then thepower supply controller 105 decreases the level of its output signalS105. If these current values are equal to each other, the power supplycontroller 105 retains the level of its output signal S105. And in theinitial state, the power supply controller 105 outputs zero as itsoutput signal S105. The tester 106 measures the alternating current I101and outputs the amplitude of the current as its output signal S106 tothe power supply controller 105.

The power supply 104 and power supply controller 105 of the control unit103 and the conductive plate 100 together functions as electric fieldgenerating means 107 for exposing the devices on the wafer 101 to anelectric field with an intensity proportional to the ac voltage to carryout a burn-in test on the devices. Also, the tester 106 of the controlunit 103 is an exemplary stress sensing means 108 as defined in theappended claims. That is to say, the tester 106 senses the electricfield stress, which is placed on the devices on the wafer 101 as aresult of the exposure to the electric field generated from the electricfield generating means 107, by the current I101 flowing between thesubstrate plate 102 and the ground.

FIG. 5 illustrates part of the circle A1 shown in FIG. 4, including partof the conductive plate 100, some of the devices under the burn-in teston the wafer 11 and part of the substrate plate 102, to a larger scale.As shown in FIG. 5, the semiconductor device (i.e., an MOS transistor inthis case) has been electrically isolated from adjacent devices byisolation regions 101 e and 101 f. The device includes gate electrode101 a, gate oxide film 101 b, source/drain regions 101 c and 101 d andp-well 101 g. That is to say, part of the wafer 101 for this deviceincludes the source/drain regions 101 c and 101 d, p-well 101 g andsubstrate portion 101 h. As also shown in FIG. 5, the wafer 101 issupported on the substrate plate 102. The device is exposed to theelectric field S100 that has been created from the conductive plate 100by applying an ac voltage from the power supply 104 to the conductiveplate 100. A parallel plate capacitor 110 is formed between theconductive plate 100 and gate electrode 110 a and another parallel platecapacitor 111 is formed between the gate electrode 110 a and p-well 101g. A leakage resistor 112 exists between the gate electrode 110 a andthe ground, and a current I101 flows from the substrate plate 102 intothe ground. In FIG. 5, only one n-channel MOS transistor is illustratedas one of the great many devices on the wafer 101 for the sake ofsimplicity. Accordingly, the source/drain regions 101 c and 101 d havebeen doped with an n-type dopant, while the p-well 101 g and substrateportion 101 h are of p-type.

The substrate portion 101 h is in electrical contact with the groundedsubstrate plate 102 and is fixed at 0 V. The p-well 101 g is in contactwith the substrate portion 101 h and these regions 101 g and 101 h areboth of p-type. So the p-well 101 g is also fixed at 0 V. When a voltagev (V) is applied to the conductive plate 100, the electric field S100 iscreated, thereby polarizing the gate electrode 101 a and inducing avoltage Va (V) at the gate electrode 501 a. As a result, an electricfield stress Ea (V/m) proportional to the voltage Va (V) is placed onthe gate oxide film 101 b. Hereinafter, this stress will be analyzedquantitatively.

Suppose the area of the gate electrode 101 a is Sa (m²), the distancebetween the conductive plate 100 and gate electrode 101 a is d1 (m), thethickness of the gate oxide film 101 b is d2 (m), the permeabilitybetween the conductive plate 100 and gate electrode 101 a is ε1(C/(V·m)) and the permeability of the gate oxide film 101 b is ε2(C/(V·m)). To simplify the computation, one parallel plate capacitor 110is formed between the conductive plate 100 and gate electrode 101 a andanother parallel plate capacitor 111 is formed between the gateelectrode 101 a and p-well 101 g as shown in FIG. 6.

FIG. 6 is a schematic representation of the structure shown in FIG. 5.As also shown in FIG. 6, an ac voltage is applied from the power supply104 to the conductive plate 100, thereby creating the electric field towhich the devices will be exposed. A leakage resistor 112 exists betweenthe gate electrode 101 a and the ground.

The capacitance values c110 (F) and c111 (F) of the parallel platecapacitors 110 and 111 are given byc 110=ε1·S/d1  (15)c 111=ε2·S/d2  (16)

Supposing the resistance value of the leakage resistor 112 is r112 (Ω)and the voltage applied to the conductive plate 100 is V(t) (V), thevoltage Va(t) (V) placed on the gate oxide film 101 b is given by thedifferential equation: $\begin{matrix}\begin{matrix}{{{Va}(t)} = {{{r112} \cdot {{c110}\left( {{\mathbb{d}{V(t)}}/{\mathbb{d}t}} \right)}} -}} \\{{{r112} \cdot \left( {{c110} + {c111}} \right)} \times \left( {{\mathbb{d}{{Va}(t)}}/{\mathbb{d}t}} \right)}\end{matrix} & (17)\end{matrix}$

Next, it will be described how the test system with such a configurationoperates. FIGS. 7A, 7B, 7C, 7D and 7E illustrate the waveforms of thereference current signal S105 a, current I101 flowing, output signalS106 of the tester 106, output signal S105 of the power supplycontroller 105 and electric field S100, respectively.

The substrate plate 102 is grounded at a potential level of 0 V. Thewafer 101 is in electrical contact with the substrate plate 102, andeach of the numerous devices on the wafer 101 also has its substratepotential fixed at 0 V. In its initial state, the gate electrode 101 aof each of those devices is also fixed at 0 V due to the existence of ametal interconnect and leakage current components. While the burn-intest is carried out, an alternating current flows between the substrateplate 102 and the ground. This alternating current has a valueproportional to the total area of gate electrodes 101 a that are exposedto the electric field among the gate electrodes 101 a of the devices.Hereinafter, this relationship will be analyzed quantitatively.

Suppose the voltage applied to the conductive plate 100 has a frequencyof f (Hz) and amplitude of V0 (V), the area exposed to the electricfield is S (m²) and the devices have an average gate density of D. Then,the voltage V(t) (V) applied to the conductive plate 100 at a time t (s)is given by the following complex notation:V(t)=V 0 exp (j2πft)  (18)where j is an imaginary unit. Accordingly, the voltage Va(t) (V) placedon the gate oxide film 101 b at the time t (s) is given byVa(t)=Va 0 exp (j2πft)  (19)Combining Equations (15) and (19) together, the voltage Va0 (V) producedat the gate electrode 101 a is given byVa 0=r 112·c 110/(r 112·(c 110+c 111)+1/j2πf)×V 0  (20)

If the frequency f (Hz) is set equal to or greater than1/r112(c110+c111), the intensity of the electric field Ea(t) (V/m)placed on the gate oxide film 101 b is given byEa(t)=Va(t)/d2=Ea 0 exp (j2πft)  (21)in accordance with Equations (19) and (20). On the other hand, theintensity of the electric field Ea0 (V/m) placed on the gate electrode101 a is given byEa 0=1/d2×c 110/(c 110+c 111)×V 0  (22)

When the devices on the wafer 101 are exposed to the electric fieldcreated from the conductive plate 100, the total area of gate electrodesincluded in the exposure range is obtained by D×S (m²). Accordingly, thecurrent I101, flowing between the substrate plate 102 and the groundwhen the voltage V(t) (V) is applied to the conductive plate 100, isgiven by $\begin{matrix}\begin{matrix}{{I101} = {2\pi\quad{f \cdot {c110} \cdot {{c111}/\left( {{c110} + {c111}} \right)} \cdot D \cdot S \cdot}}} \\{{V0}\quad{\exp\left( {j\left( {{2{\pi{ft}}} + {\pi/2}} \right)} \right)}} \\{= {2\pi\quad{f \cdot {c111} \cdot D \cdot S \cdot {d2} \cdot {Ea0}}\quad{\exp\left( {j\left( {{2{\pi{ft}}} + {\pi/2}} \right)} \right)}}}\end{matrix} & (23)\end{matrix}$

Equation (23) shows that the current I101 flowing is proportional to notonly the total gate area of the devices existing in the range exposed tothe electric field but also the amplitude V0 (V) of the voltage appliedto the conductive plate 100.

When an excessively intense electric field is placed on the gate oxidefilm 101 b, breakdown will occur even if the gate oxide film 101 b hasno defects. Accordingly, supposing a critical electric field, belowwhich no breakdown occurs in the gate oxide film 101 b, is E10 (V/m), itcan be seen from Equation (23) that when the amplitude of thealternating current I101 reaches the current value I1 (A) given byI 1=2πf·c 111·D·S·d2·E 10  (24)the critical electric field E10 should be placed on the gate oxide film101 b.

Next, it will be described with reference to FIGS. 7A through 7E how toperform a burn-in test with the critical electric field E10 placed onthe gate oxide film 101 b. This test is carried out as in the firstembodiment illustrated in FIGS. 2A through 2E. So this test will bebriefly outlined below. First, the reference current signal S105 a isset to the current value I1 (A). In the initial state, the current I101flowing is 0 (A). Then, the power supply controller 105 increases itsoutput voltage S105 from the initial value of 0 V. As the output voltageS105 of the power supply controller 105 rises, the voltage applied fromthe power supply 104 to the conductive plate 100 increases, so does theintensity of the electric field S100 created from the conductive plate100. As a result, the current I101 flowing increases its amplitude. Atthe time t1 (s), the output signal S106 of the tester 106 gets equal tothe current I1 (A). Accordingly, the power supply controller 105 has itsoutput signal S105 fixed at the current value. As a result, in theinterval between the times t1 (s) and t2 (s), a constant ac voltage isapplied from the power supply 104 and the devices on the wafer 101 areexposed to an electric field with a constant intensity. And the criticalelectric field E10 (V/m) is placed on the gate oxide film 101 b thereof.

Thereafter, at a time t2 (s), the reference current signal S105 a is setto 0 (A). Accordingly, the power supply controller 105 graduallydecreases its output signal S105. As the output voltage S105 of thepower supply controller 105 falls, the voltage applied from the powersupply 104 decreases, so does the intensity of the electric field S100created from the conductive plate 100. As a result, the alternatingcurrent I101 flowing decreases its amplitude. When the current I101 goes0 (A) at a time t3 (s), the tester 106 will have its output signal S106fixed at 0 (A).

That is to say, in the example illustrated in FIGS. 7A through 7E,supposing the current I101 sensed by the tester 106 is the maximum (orthreshold) current value given by Equation (24) (i.e., where the maximumelectric field placed on the gate oxide film 101 b is equal to thecritical electric field E10 (V/m)), an electric field with an intensitychanging as a sine function is emitted from the conductive plate 100toward the devices in the interval between the times t1 (s) and t2 (s).As a result, a predetermined electric field stress is placed on thesemiconductor devices. Strictly speaking, the burn-in test has beencarried out for a period in which the intensity of the electric fieldplaced on the gate oxide film 101 b is greater than the minimum requiredelectric field E1 (V/m) and less than the critical electric field E10(V/m). That is to say, the burn-in test period T (s) is given byT=(t 2−t 1)×(1/2−α/π)  (25)where sin α=E10/E1. Accordingly, if the interval between the times t1and t2 is set longer, then the burn-in test can be carried out for alonger time. Furthermore, since a reverse electric field is also placedon the gate oxide film, failures can be screened out much moreeffectively. Also, the current flows bidirectionally through thesubstrate of each of those devices. Thus, sufficient stress can beplaced on lattice defects existing either in the substrate or around thesubstrate/gate electrode interface. Consequently, devices with failurescan be screened out even more effectively.

Embodiment 4

Next, a fourth embodiment of the present invention will be described. Inthis embodiment, to carry out a burn-in test without degrading thenormal gate oxide film 101 b of any device on the wafer 101 shown inFIG. 4, the critical electric field E10 is not placed as a forwardelectric field on the gate oxide film 101 b and no reverse electricfield with an intensity exceeding a maximum allowable value is placed onthe gate oxide film 101 b.

The fourth embodiment is different from the third embodiment just in theway the control unit 103 shown in FIG. 4 controls the applied voltage.That is to say, the semiconductor wafer test system of the fourthembodiment also has the overall configuration shown in FIG. 4 and thedetailed description thereof will be omitted herein. As for this fourthembodiment, it will be described with reference to FIG. 4 just how thecontrol unit 103 controls the voltage applied to the conductive plate100.

In the control unit 103, the power supply 104 applies voltage pulses,whose amplitude is proportional to the output signal S105 of the powersupply controller 105, to the conductive plate 100. FIGS. 8A through 8Eillustrate a situation where the electric field is created as pulsesfrom the conductive plate 100. Supposing the maximum allowable reverseelectric field that can be placed on the gate oxide film 101 b of eachdevice is E3 (V/m), the duty cycle Duty of each voltage pulse is set toDuty=E 3/(E 1+E 3)  (26)As shown in FIG. 8E, each interval in which the forward minimum requiredelectric field E1 (V/m) is placed on the gate oxide film 101 b is setshorter than each interval in which the reverse electric field E3 (V/m)is placed thereon. In the other respects, the test system of the fourthembodiment operates in the same way as the counterpart of the thirdembodiment.

It should be noted that the positive intensity of the forward electricfield placed on the gate oxide film 101 b is E1 (V/m), while thenegative intensity of the reverse electric field is −E3 (V/m) as shownin FIG. 8E. Thus, according to this embodiment, no reverse electricfield with an intensity exceeding its maximum allowable value E3 (V/m)is placed on the gate oxide film 101 b. Also, the electric field isplaced as pulses on the gate oxide film 101 b. So the electric fieldplaced on the gate oxide film 101 b does not have to be equal to thecritical electric field E10 (V/m) but may be equal to the minimumrequired electric field E1 (V/m). Accordingly, there is no concern aboutthe degradation of any normal gate oxide film 101 b.

Embodiment 5

Hereinafter, a fifth embodiment of the present invention will bedescribed. FIG. 9 illustrates an exemplary overall arrangement for asemiconductor wafer test system according to the fifth embodiment.First, the respective elements of the system will be described.

As shown in FIG. 9, this test system is for use to carry out a burn-intest on a great number of semiconductor devices that have been formed ona semiconductor wafer 401 supported on a substrate plate 402. In thisembodiment, the substrate plate 402 is secured to a drive shaft 407 soas to get driven by a motor 408. The test system further includes:conductive plate 400 for generating an electric field S400 to which thewafer 401 should be exposed; and control unit 403 for controlling avoltage to be applied to the conductive plate 400. The control unit 403includes dc power supply 404, power supply controller 405 and tester406. The power supply 404 applies a dc voltage to the conductive plate400. The power supply controller 405 controls the power supply 404 byoutputting a control signal S405 thereto and is controlled itself inresponse to a reference current signal S405 a supplied thereto. Thetester 406 measures a current 1401 flowing between the substrate plate402 and the ground, and outputs a signal S406 to the power supplycontroller 405.

In response to the output signal S405 of the power supply controller405, the power supply 404 applies a dc voltage, whose amplitude isproportional to the output current S405, to the conductive plate 400.The conductive plate 400 generates an electric field S400 with anintensity proportional to the voltage applied from the power supply 404.If the current value represented by the output signal S406 of the tester406 is smaller than the preset one represented by the reference currentsignal S405 a, then the power supply controller 405 increases the levelof its output signal S405. On the other hand, if the former currentvalue is greater than the latter current value, then the power supplycontroller 405 decreases the level of its output signal S405. If thesecurrent values are equal to each other, the power supply controller 405retains the level of its output signal S405. And in the initial state,the power supply controller 405 outputs zero as its output signal S405.The tester 406 measures the alternating current I401 flowing between thesubstrate plate 402 and the ground and outputs the amplitude of thecurrent as its output signal S406 to the power supply controller 405.

The drive shaft 407 is horizontally spaced apart from the wafer 401,while the motor 408 rotates the drive shaft 407 at a constant angularvelocity ω (rads/s). Accordingly, while the substrate plate 402 is beingrotated by the motor 408 around the drive shaft 407, the wafer 401 isloaded and unloaded into/from the space, in which the electric fieldS400 created from the conductive plate 400 exists, at regular intervals.

Next, it will be described how the test system of the fifth embodimentoperates. As described above, the wafer 401 is sufficiently spaced apartfrom the drive shaft 407. Accordingly, while the devices on the wafer401 are passing under the conductive plate 400, the devices are exposedto the electric field S400. However, once the wafer 401 has gone out ofthe space under the conductive plate 400, the devices are exposed to noelectric field at all.

Thus, if the ratio of the interval in which the wafer 401 exists insidethe electric field S400 under the conductive plate 400 to the intervalin which the wafer 401 is located outside of the electric field S400 isset to the predetermined ratio ofE 3/(E 1+E 3):E 1/(E 1+E 3)  (27)then a pulsed electric field will be placed on the devices as in thefourth embodiment.

Accordingly, if the reference current signal S405 a is supplied in sucha manner as to place the minimum required electric field E1 (V/m) on thegate oxide film during the burn-in test as in the fourth embodiment,then a predetermined stress will be placed on the devices. As a result,the burn-in test can be carried out as in the fourth embodiment.

In the third and fourth embodiments, an ac voltage should be applied tothe conductive plate 100. In contrast, according to this fifthembodiment, a dc voltage may be applied to the conductive plate 400.This is because the electric field changes for the wafer 401 as thewafer 401 is rotated by the motor 408.

Thus, according to the fifth embodiment, even though a dc power supplyis used as the power supply 404, the burn-in period can be changed usingparameters other than the process constants. Also, no reverse electricfield with an intensity exceeding the maximum allowable value will beplaced on the gate oxide film. In addition, the voltage stress isapplied as pulses, the electric field placed on the gate oxide film doesnot have to be equal to the critical electric field E10 (V/m) but may bethe minimum required electric field E1 (V/m). Accordingly, there is noconcern about the degradation of any normal gate oxide film.

Thus, the test system of the fifth embodiment can also change theburn-in period freely without changing the process constants. Inaddition, a reverse electric field is also placed on the devices, sodevices with failures can be screened out much more effectively.Furthermore, sufficient stress can be placed on lattice defects existingeither in the substrate or around the substrate/gate electrodeinterface. Consequently, devices with failures can be screened out evenmore effectively.

In the foregoing embodiments, the present invention has been describedas being applied to an n-channel MOS transistor. Naturally, the presentinvention is equally applicable to a p-channel MOS transistor.

1. A system for carrying out a burn-in test on a great number ofsemiconductor devices that have been formed on a semiconductor wafer,each said device including a gate oxide film between a substrate and agate electrode, the gate electrode being connected to a metalinterconnect, wherein the system comprises electromagnetic wavegenerating means for exposing the wafer to an electromagnetic wave as analternating current wave and placing an electric field with apredetermined intensity on the gate oxide film of each said device onthe wafer, thereby carrying out the burn-in test on the devices.
 2. Thesystem of claim 1, further comprising: stress sensing means for sensinga voltage stress imposed on the gate oxide film of each said devicewhile the wafer is being exposed to the electromagnetic wave that hasbeen generated by the electromagnetic wave generating means; and controlmeans for controlling the intensity of the electric field, which isrepresented by the electromagnetic wave generated by the electromagneticwave generating means, so that the voltage stress sensed by the stresssensing means falls within a preset threshold value range.
 3. The systemof claim 2, wherein the voltage stress, which has been sensed by thestress sensing means as being imposed on the gate oxide film, comprisesa forward voltage stress and a reverse voltage stress, and wherein thecontrol means controls the electric field intensity of theelectromagnetic wave, generated by the electromagnetic wave generatingmeans, so that the forward and reverse voltage stresses imposed on thegate oxide film fall within first and second preset threshold valueranges, respectively, the second range being lower than the first range.4. A method for carrying out a burn-in test on a great number ofsemiconductor devices that have been formed on a semiconductor wafer,each said device including a gate oxide film between a substrate and agate electrode, the gate electrode being connected to a metalinterconnect, wherein the method comprises the step of exposing thewafer to an electromagnetic wave as an alternating current wave andplacing an electric field with a predetermined intensity on the gateoxide film of each said device on the wafer, thereby carrying out theburn-in test on the devices.
 5. The method of claim 4, comprising thesteps of: sensing a voltage stress imposed on the gate oxide film ofeach said device while the wafer is being exposed to the electromagneticwave; and controlling the intensity of the electric field, which isrepresented by the electromagnetic wave generated, so that the voltagestress sensed as being imposed on the gate oxide film falls within apreset threshold value range.
 6. The method of claim 5, wherein thevoltage stress, which has been sensed as being imposed on the gate oxidefilm, comprises a forward voltage stress and a reverse voltage stress,and wherein the electric field intensity of the electromagnetic wavegenerated is controlled so that the forward and reverse voltage stressesimposed on the gate oxide film fall within first and second presetthreshold value ranges, respectively, the second range being lower thanthe first range.
 7. A system for carrying out a burn-in test on a greatnumber of semiconductor devices that have been formed on a semiconductorwafer, each said device including a gate oxide film between a substrateand a gate electrode, the gate electrode being connected to a metalinterconnect, wherein the system comprises electric field generatingmeans for exposing the wafer to an electric field as an alternatingcurrent wave and setting the electric field placed on the gate oxidefilm of each said device on the wafer to a pre-determined intensity,thereby carrying out the burn-in test on the devices.
 8. The system ofclaim 7, further comprising: stress sensing means for sensing a voltagestress imposed on the gate oxide film of each said device while thewafer is being exposed to the electric field that has been generated bythe electric field generating means; and control means for controllingthe intensity of the electric field, generated by the electric fieldgenerating means, so that the voltage stress sensed by the stresssensing means falls within a preset threshold value range.
 9. The systemof claim 8, wherein the voltage stress, which has been sensed by thestress sensing means as being imposed on the gate oxide film, comprisesa forward voltage stress and a reverse voltage stress, and wherein thecontrol means controls the intensity of the electric field, generated bythe electric field generating means, so that the forward and reversevoltage stresses imposed on the gate oxide film fall within first andsecond preset threshold value ranges, respectively, the second rangebeing lower than the first range.
 10. A method for carrying out aburn-in test on a great number of semiconductor devices that have beenformed on a semiconductor wafer, each said device including a gate oxidefilm between a substrate and a gate electrode, the gate electrode beingconnected to a metal interconnect, wherein the method comprises the stepof exposing the wafer to an electric field as an alternating currentwave and setting the electric field placed on the gate oxide film ofeach said device on the wafer to a predetermined intensity, therebycarrying out the burn-in test on the devices.
 11. The method of claim10, comprising the steps of: sensing a voltage stress imposed on thegate oxide film of each said device while the wafer is being exposed tothe electric field; and controlling the intensity of the electric fieldgenerated so that the voltage stress sensed as being imposed on the gateoxide film falls within a preset threshold value range.
 12. The methodof claim 11, wherein the voltage stress, which has been sensed as beingimposed on the gate oxide film, comprises, a forward voltage stress anda reverse voltage stress, and wherein the intensity of the electricfield generated is controlled so that the forward and reverse voltagestresses imposed on the gate oxide film fall within first and secondpreset threshold value ranges, respectively, the second range beinglower than the first range.
 13. A system for carrying out a burn-in teston a great number of semiconductor devices that have been formed on asemiconductor wafer, each said device including a gate oxide filmbetween a substrate and a gate electrode, the gate electrode beingconnected to a metal interconnect, the system comprising: electric fieldgenerating means including a conductive plate for exposing the wafer toan electric field as a direct current wave, the generating means settingthe electric field placed on the gate oxide film of each said device onthe wafer to a predetermined intensity; and driving means for loadingand unloading the wafer into/from a space where the electric field,generated from the conductive plate, exists, whereby the wafer isexposed to an alternating-current electric field to carry out theburn-in test on the devices.
 14. The system of claim 13, wherein thedriving means loads and unloads the wafer into/from the space so that aratio of a period, during which the wafer stays inside the electricfield generated from the conductive plate, to a period, during which thewafer stays outside of the electric field, meets a predetermined value.15. The system of claim 14, wherein the predetermined ratio is given byE 2/(E 1+E 2):E 1/(E 1+E 2) where E1 and E2 are respective intensitiesof forward and reverse electric fields placed on the gate oxide film ofeach said device.
 16. A method for carrying out a burn-in test on agreat number of semiconductor devices that have been formed on asemiconductor wafer, each said device including a gate oxide filmbetween a substrate and a gate electrode, the gate electrode beingconnected to a metal interconnect, the method comprising the steps of:exposing the wafer to an electric field that has been generated as adirect current wave from a conductive plate; and loading and unloadingthe wafer into/from a space, where the electric field generated from theconductive plate exists, to expose the wafer to the electric fieldintermittently, whereby the wafer is exposed to an alternating-currentelectric field to carry out the burn-in test on the devices.